Al2O3- Sapphire Wafer, M Plane (10-10) 3"Dia x 0.5 mm wafer, 1SP

Specifications:

• Orientation: M Plane,  <10-10> +/-0.5^`o
• Wafer size: 3" dia x 0.5 mm thickness 
• One side Epi polished
• Polished surface: Wafer surface is EPI polished via a special CMP procedure. Ra <5A
• Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container 

Typical Properties:

• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• Crystal Purity:  >99.99%
• Hardness: 9 ( mohs)
• Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) ) 
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis,  <5 x10^-5  at C axis