Shopping Cart
0 Items - Total : $ 0,00
Your Cart is currently empty!
Product
Quartz-single-crystal1

Al2O3- Sapphire Wafer, C-plane (0001), 3"Dia x0.5 mm, 1SP

Features:

  • Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films 
  • Orientation: C-axis[0001]( +-0.3o) with Standard Flat
  • Diameter: 76.2mm +/- 0.1mm
  • Thickness: 500um +/- 25 um
  • Major Flat: A-axis[11-20]+/-0.2o
  • Major Flat Length: 22mm +/- 1.0mm
  • Surface Finish: Front sides: Epi- polished Ra<0.5nm(by AFM)
  • TTV: < 10um
  • Polished surface: One side epi polished by special CMP technology
  • Package: Each wafer is packed in 1000 class clean room 

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2 
  • Growth Technique: CZ
  • Crystal Purity:  >99.99%
  • Hardness: 9 ( mohs)
  • Thermal Expansion: 7.5x10-6 (oC)
  • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  • Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5  at A axis,  -5  at C axis

Contact Us

Please type your full name.
Invalid Input
Invalid Input
Invalid Input
Invalid email address.
Invalid Input
Invalid Input
Invalid Input
Invalid Input