Al2O3 - Sapphire Wafer, A plane (11-20), 1 SP

Features:

• Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
• Orientation tolerance:  +/-0.5 Deg.  A plane orientation 
• Polished surface: One side EPI polished via a special CMP procedure with Ra < 5 A
• Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

Typical Properties:

• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• Crystal purity:  >99.99%
• Hardness: 9 (mohs)
• Thermal Expansion: 7.5x10^-6 (/^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) ) 
• Dielectric Constant: ~ 9.4 @ 300K  at A axis, ~ 11.58 @ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis , < 5 x10^-5  at C axis